Three-dimensional Transient Device Simulation with Minimos
نویسنده
چکیده
Our device simulator MINIMOS has been used for the numerical analysis -of three-dimensional non-planar silicon MOSFET and GaAs MESFET structures. Here we present an extension of the program for the simulation of transient effects. This version of MINIMOS has further been enhanced by a new, highly accurate current integration method. The computational complexity of three-dimensional transient simulations is tackled by preconditioned iterative methods. We present efficient algorithms and their implementation for the solution of the large linear systems of equations on vector and parallel computers. 1 Transient Simulation Three-dimensional transient simulation of MOSFET structures is necessary to analyze both the influence of time dependent physical quantities such as the recombination rate, and three-dimensional non-planar geometries such as the field-oxide transition. The current continuity equations are discretized in space by the Scharfetter-Gummel method and in time by the fully implicit (backward Euler) method. Time-step control is based on the functional I i+l i+l I [(ni+1 ni) In nni + (pi+l pi) lnppi
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